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DMP2035U-7 MOSFET N-Channel 20V 3.6A SOT-23/SC-59 marking MPS high density battery designlow RDS/high saturation current capability
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8v |
| 最大漏极电流Id Drain Current | 3.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.035Ω/Ohm @4A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1.0V |
| 耗散功率Pd Power Dissipation | 810mW/0.81W |
| Description & Applications | • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • ESD Protected Up To 3KV • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 | •低导通电阻 •低输入电容 •开关速度快 •低输入/输出漏 •铅通过设计/符合RoHS标准（注1） •ESD保护可达3KV •“绿色”设备（注2） •符合AEC-Q101标准的高可靠性 |
