Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
PBSS306NZ NPN Transistors(BJT) 100V 5.1A 110MHz 60~330 40mV~300mV SOT-223/SC-73 marking S306NZ
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流IC Collector Current(IC) | 5.1A |
| 截止频率fT Transtion Frequency(fT) | 110MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 60~330 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 40mV~300mV |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | 100 V, 5.1 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS306PZ. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) Automotive applications |
| 描述与应用 | 100 V，5.1 A NPN低VCEsat（BISS）晶体管 一般说明 NPN低VCEsat 突破小信号（BISS）晶体管SOT223（SC-73） 小型表面贴装器件（SMD）塑料包装。 PNP补PBSS306PZ。 特点 低集电极 - 发射极饱和电压VCE监测 高集电极电流能力IC和ICM 高集电极电流IC在高增益（HFE） 由于产生的热量少，高效率 更小的印刷电路板（PCB）面积比传统的晶体管 应用 高电压的DC-DC转换 高压MOSFET的栅极驱动 高压电机控制 高压电源开关（如电机，风机） 汽车应用 |
