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SST113 JFET N-Channel 35v 2mA SOT-23 marking C3 low leakage current：20 pA

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Product description
最大源漏极电压Vds
Drain-Source Voltage		35v
栅源极击穿电压V(BR)GS
Gate-Source Voltage		 -35v
漏极电流(Vgs=0V)IDSS
Drain Current		2ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage		 -3v
耗散功率Pd
Power Dissipation		350mW/0.35W
Description & Applications•N–Channel JFETs •Low On-Resistance: J108 <8 •Fast Switching—tON: 4 ns •Low Leakage: 20 pA •Low Capacitance: 11 pF •Low Insertion Loss
描述与应用•N沟道JFETs •低导通电阻：J108<8 •快速开关吨：4纳秒 •低漏电流：20 pA的 •低电容：11 pF的 •低插入损耗
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