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2SC4655GBL NPN Transistors(BJT) 30V 30mA 230MHz 70~250 SOT-523/SC-75 marking KB RF amplifier oscillation mixing
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 30mA |
截止频率fT Transtion Frequency(fT) | 230MHz |
直流电流增益hFE DC Current Gain(hFE) | 70~250 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 125mW/0.125W |
Description & Applications | Features •Silicon PNP epitaxial planer type •For high-frequency amplification •Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. •SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
描述与应用 | 特点 •PNP硅外延平面型高频放大 •最佳射频放大,振荡,混合,中频的FM/ AM收音机。 •SS-迷你型包装,让瘦身的设备通过自动插入磁带包装 |