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CPH5803 N MOSFET+SBD SOT153 marking QD
| MOSFET TYPE | N-Channel Silicon MOSFET |
| MOS Drain-Source Voltage (Vds) | 20V |
|
Vgs(±) MOS Gate-Source Voltage |
10V |
| MOS Drain Current （Id） | 1.5A |
|
Rds(on) MOS Drain-Source On-State Resistance |
ID=1A, VGS=4V RDS=160mΩ~210mΩ
ID=0.5A, VGS=2.5V RDS=200mΩ~280mΩ
ID=0.1A, VGS=1.8V RDS=280mΩ~390mΩ
|
|
Vgs(th) MOS Gate-Source Threshold Voltage |
|
| DIODES TYPE | Schottky Barrier Diode |
| DIODE Reverse Voltage (Vr) | 15V |
| DIODE Average Rectified Current (Io) | 1A |
| DIODE Forward Voltage(Vf) | 0.4V |
| Power Dissipation (Pd) | 0.8W |
| Description & Applications | [MOSFET]
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
[SBD]
• Short reverse recovery time.
• Low forward voltage.
|
| Technical Documentation Download | Read Online |
