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FMMTA56TA PNP transistors（BJT） -80V -500mA/-0.5A 100MHz 50 -250mV/-0.25V SOT-23 marking 2G medium power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 330mW/0.33W |
| Description & Applications | MEDIUM POWER TRANSISTORS FEATURES * Gain of 50 at IC=100mA |
| 描述与应用 | 中等功率晶体管 特点 *IC=100MA时放大50倍 |
