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PMMT491A NPN Transistors(BJT) 40V 1A 150MHz 900 200mV~500mV SOT-23/SC-59 marking 3AW
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 900 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV~500mV |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN BISS transistor FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. |
| 描述与应用 | NPN BISS晶体管 特点 •高电流（最大1 A） •低集电极 - 发射极饱和电压确保 降低功耗。 应用 •电池供电的设备，如高电流和低功耗 消耗是重要的。 说明 NPN突破性小信号（BISS）晶体管的 SOT23塑料包装。 |
