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LMBT3946DW1T1G PNP+NPN Complex Bipolar Transistor -40V/60V -200mA/200mA 300 SOT-363/SC-88 marking 46 switch and digital circuit application

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≤99
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≤499
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≤999
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≤2999
$0.048
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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-40V/60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-40V/40V
集电极连续输出电流IC Collector Current(IC)-200mA/200mA
截止频率fT Transtion Frequency(fT)250MHz/300MHz
直流电流增益hFE DC Current Gain(hFE)300
管压降VCE(sat) Collector-Emitter Saturation Voltage-400mV/300mV
耗散功率Pc Power Dissipation150mW
Description & ApplicationsFeatures • Dual General Purpose Transistors • hFE, 100–300 • Low VCE(sat), < 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3946DW1T1G = 46
描述与应用特点 •双通用晶体管 •HFE,100-300 •低VCE(SAT)<0.4 V •简化电路设计 •缩小板级空间 •减少元件数量 •可在8毫米,7寸/3,000组带和卷轴 •器件标识:LMBT3946DW1T1G= 46
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