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RN2107ACT PNP Bipolar Digital Transistor (BRT) -50V -80mA 80 0.1W/100mW CST3 marking D6 switch inverter interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V
集电极连续输出电流IC Collector Current(IC)-80mA
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.213
直流电流增益hFE DC Current Gain(hFE)80
截止频率fT Transtion Frequency(fT)200MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsFeatures • Transistor Silicon PNP Epitaxial Type (PCT Process) • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. • Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • Complementary to RN1107ACT to RN1109ACT Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •晶体管的硅PNP外延型(PCT工艺) •超小型封装(CST3)是适用于额外的高密度制造。 •将偏置电阻晶体管,减少了部件数量。 •减少零件计数使能更加紧凑的设备制造和节省组装成本。 •互补RN1107ACT的到RN1109ACT 应用 •开关,逆变电路,接口电路和驱动器电路应用
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