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DDC114YU-7-F NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 100~600 200mW/0.2W SOT-363/SC-88/SC70-6 marking N14T3 switching inverting interface driver circuit
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 100mA |
Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.21 |
Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.21 |
直流电流增益hFE DC Current Gain(hFE) | 100~600 |
截止频率fT Transtion Frequency(fT) | 250MHz |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | Features •NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR •Epitaxial Planar Die Construction •Complementary PNP Types Available (DDA) •Built-In Biasing Resistors •Lead Free/RoHS Compliant (Note 3) |
描述与应用 | 特点 •预偏置NPN小信号SOT-363双表面装载晶体管 •外延平面电路小片建设 •互补PNP类型(DDA) •内置偏置电阻 •无铅/ RoHS规定(注3) |