SI8413DB-T1-E1 MOSFET P-Channel -20V -6.5A 0.0393ohm Vth:-0.6V-1.4V 2X2 4-MFP marking 8413|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI8413DB-T1-E1 MOSFET P-Channel -20V -6.5A 0.0393ohm Vth:-0.6V-1.4V 2X2 4-MFP marking 8413

Model：SI8413DB-T1-E1
Mark / screen / code / typing：8413
Manufacturer：
Date Code：11+NOPB
Package：2X2 4-MFP
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	12V
最大漏极电流Id Drain Current	-6.5A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.0393Ω @-1A,-4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	-0.6V-1.4V
耗散功率Pd Power Dissipation	2.77W
Description & Applications	FEATURES • TrenchFET Power MOSFET • MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
描述与应用	芯片级封装减少占位面积简介（0.62毫米）每占位面积导通电阻

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