My order
Share to:  
Location：Home > Stock Inventory > Product Details

SI8413DB-T1-E1 MOSFET P-Channel -20V -6.5A 0.0393ohm Vth:-0.6V-1.4V 2X2 4-MFP marking 8413

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-6.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.0393Ω @-1A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.6V-1.4V
耗散功率Pd
Power Dissipation		2.77W
Description & ApplicationsFEATURES • TrenchFET Power MOSFET • MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area
描述与应用芯片级封装 减少占位面积简介（0.62毫米） 每占位面积导通电阻
List of related models

Record / license number：粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00