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2SC2712S-GR NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 250mV/0.25V SOT-23/SC-59 marking LG radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & Applications NPN Silicon epitaxial Transistors Audio frequency general purpose amplifier applications Features High voltage and high current Excellent hFE linearity High hFE Low noise Small package Complementary to 2SA1162
描述与应用 NPN硅外延晶体管 音频通用放大器应用 特点 高电压和高电流 优秀HFE线性 高HFE 低噪音 小型封装 互补2SA1162
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