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RW1E014SN N MOSFET 30V 1.4A SOT563 MARKING PN Low On-resistance, High speed switching
Drain-Source Voltage (Vds) | 30V |
Vgs(±) Gate-Source Voltage |
±20V |
Drain Current (Id) | 1.4A |
Drain-Source On-State (Rds) | ID= 1.4A, VGS= 4V RDS=270~380mΩ |
Vgs (th) Gate-Source Threshold Voltage |
1~2.5v |
Power dissipation (Pd) | 0.7w |
Description & Applications | 4V Drive Nch MOSFET
1) Low On-resistance, High speed switching.
2) Built-in G-S Protection Diode.
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