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RW1E014SN N MOSFET 30V 1.4A SOT563 MARKING PN Low On-resistance, High speed switching

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Product description
Drain-Source Voltage (Vds)  30V

Vgs(±)

Gate-Source Voltage

 ±20V
Drain Current (Id)  1.4A
Drain-Source On-State (Rds)  ID= 1.4A, VGS= 4V RDS=270~380mΩ

Vgs (th)

Gate-Source Threshold Voltage

 1~2.5v
Power dissipation (Pd)  0.7w
Description & Applications  4V Drive Nch MOSFET
1) Low On-resistance, High speed switching. 
2) Built-in G-S Protection Diode. 
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