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SSM6K203FE MOSFET N-Channel 20V 2.8A SOT-563/ES6 marking KM fast switch/high input impedance/Low Gate Threshold Voltage
最大源漏极电压Vds Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
最大漏极电流Id Drain Current | 2.8A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.061Ω/Ohm @2A,4V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.35-1.0V |
耗散功率Pd Power Dissipation | 500mW/0.5W |
Description & Applications | High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: Ron = 153 mΩ (max) (@VGS = 1.5V) Ron = 106 mΩ (max) (@VGS = 1.8V) Ron = 76 mΩ (max) (@VGS = 2.5V) Ron = 61 mΩ (max) (@VGS = 4.0V) |
描述与应用 | 高速开关应用 ○电源管理开关应用 •1.5 V驱动器 •低导通电阻:罗恩=153MΩ(最大)(@ VGS=1.5V) 罗恩=106MΩ(最大)(@ VGS=1.8V) 罗恩=76MΩ(最大)(@ VGS= 2.5V) 罗恩=61MΩ(最大)(@ VGS=4.0V) |