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HN4A08J PNP+PNP Complex Bipolar Transistor -30V -800mA HEF=100~320 SOT-153/SMV marking 36 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
-30V |
|
V(BR) CEO Collector-Emitter Voltage |
-25V |
| Collector Current(IC) | -0.8A |
| Transtion Frequency(fT) | 120MHZ |
| DC Current Gain(hFE) | 100~320 |
|
VCE(sat) Collector-Emitter Saturation Voltage |
-0.4V |
| Power Dissipation (Pd) | 0.3W |
| Description & Applications | Features• TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)• High DC Current Gain : hFE = 100~320 • Low Saturation Voltage : VCE(sat)= −0.4V (Max.) : (IC = −500mA , IB = −20mA) • Low Frequency Power Amplifer Applications • Power Switching |
| Technical Documentation Download | Read Online |
