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SSM6N55NU Complex FET 30V 4A UDFN6B marking NN5 power managementswitch DC/DC converter
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 46mΩ@ VGS = 10V, ID = 4000mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3~2.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | MOSFETs Silicon N-Channel MOS •Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) |
| 描述与应用 | MOSFET的硅N沟道MOS •应用程序 •电源管理开关 •DC-DC转换器 2。特点 （1）4.5V栅极驱动电压。 （2）低漏源导通电阻 RDS（ON）= 46MΩ（最大）（@ VGS=10 V） RDS（ON）=64毫欧（最大值）（@ VGS=4.5 V） |
