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2SC2859-GR NPN Transistors(BJT) 35V 500mA/0.5A 300MHz 200~400 250mV/0.25V SOT-23/SC-59 marking WG radio low power amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
35V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
30V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsNPN Silicon epitaxial Transistors Audio frequency low power amplifier applications Driver stage amplifier applications Switching applications Features Excellent hFE linearity Complementary to 2SA1182
描述与应用NPN硅外延晶体管 音频频率低功耗放大器应用 驱动级放大器的应用 开关应用 特点 优秀HFE线性 互补型2SA1182
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