Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SC2859-GR NPN Transistors(BJT) 35V 500mA/0.5A 300MHz 200~400 250mV/0.25V SOT-23/SC-59 marking WG radio low power amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 35V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 300MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~400 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | NPN Silicon epitaxial Transistors Audio frequency low power amplifier applications Driver stage amplifier applications Switching applications Features Excellent hFE linearity Complementary to 2SA1182 |
描述与应用 | NPN硅外延晶体管 音频频率低功耗放大器应用 驱动级放大器的应用 开关应用 特点 优秀HFE线性 互补型2SA1182 |