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SSM6K411TU MOSFET N-Channel 20V 10A SOT-563/UF6 marking KNH low on-resistance/fast switch/low threshold voltage/low gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 10A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 12mΩ@ VGS = 4.5V, ID = 7A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 2.5-V drive • Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V) RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 ○电源管理开关应用 ○高速开关应用 •2.5-V驱动器 •低导通电阻RDS（ON）=23.8MΩ（最大）（@ VGS=2.5 V） RDS（ON）= 14.3MΩ（最大）（@ VGS=3.5 V） RDS（ON）= 12MΩ（最大）（@ VGS=4.5 V） |
