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RN1102FV NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k 10k SOT-723/VESM marking XB switch inverting circuit interface circuit and driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)50
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating bias resistance into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to RN2102FV
描述与应用特性 开关电路,逆变电路,接口电路和驱动器电路应用 适合非常高密度安装超小型封装, 结合到晶体管偏压电阻减少部件的数量,所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可使用在各种电路。 对管是RN2102FV
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