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SSM6K211FE MOSFET N-Channel 20V 3.2A SOT-563/ES6 marking NQ
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 3.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.047Ω/Ohm @2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.35-1.0V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | High-Speed Switching Applications Power Management Switch Applications • 1.5V drive • Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V) |
| 描述与应用 | 高速开关应用 电源管理开关应用 •1.5V驱动 •低导通电阻：罗恩=307MΩ（最大）（@ VGS=1.5V） 罗恩=214MΩ（最大（@ VGS=1.8V） 罗恩=164MΩ（最大（@ VGS= 2.5V） 罗恩=126MΩ（最大）（@ VGS=4.0V） |
