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2N7002K-RTK/P MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking WC high saturation current/ESD protection
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.2Ω/Ohm @500mA,11V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.1-2.35V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | INTERFACE AND SWITCHING APPLICATION. Features N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION ESD Protected 2000V. High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. |
| 描述与应用 | 接口和开关应用 特性 N沟道MOSFET ESD保护2000V 接口和开关应用 ESD保护2000V的。 高密度电池设计用于低的源漏极导通电阻 电压控制小信号开关。 坚固，可靠。 高饱和电流能力。 |
