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BFU725F/N1 NPN 10V 40MA 55GHZ SOT343 marking B7T

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Product description

V(BR)CBO

Collector-Base Voltage

 10V

V(BR)CEO

Collector-Emitter Voltage

 2.8V
Collector Current(IC)  40MA
Transtion Frequency(fT)  55GMHZ
DC Current Gain(hFE)  160~400

VCE(sat)

Collector-Emitter Saturation Voltage 

 

Power dissipation (Pd)

 0.136W
Description & Applications   Low noise high gain microwave transistor
 Noise figure (NF) = 0.7 dB at 5.8 GHz
 High maximum stable gain 27 dB at 1.8 GHz
 110 GHz fT silicon germanium technology
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