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2N7002-7-GIGA MOSFET N-Channel 60V 115mA/0.115A SOT-23/SC-59 marking K72 low on-resistanceRDS/Low Gate Threshold Voltage/high impedance/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | ±20V |
| 最大漏极电流Id Drain Current | 0.115A/115MA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4.4Ω~13.5Ω VGS = 10V, ID = 0.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0V~2.5V |
| 耗散功率Pd Power Dissipation | 300MW/0.3W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR. * Low On-Resistance: RDS(ON). * Low Gate Threshold Voltage. * Low Input Capacitance. * Fast Switching Speed. * Low Input/Output Leakage. |
| 描述与应用 | N沟道增强型场效应晶体管。 *低导通电阻RDS（ON）。 *低栅极阈值电压。 *低输入电容。 *开关速度快。 *低输入/输出漏。 |
