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ESD8V0L2B-03L Dual Channel TVS Diode -8v~14v 0402 MARKING B3
| 极性 Polarization |
双向 Bidirectional |
| 反向关断电压/工作电压VRWM Reverse Standoff Voltage |
-8V~14V |
| 反向击穿电压VBR Breakdown Voltage |
14.5V |
| 峰值脉冲耗散功率PPPM Peak Pulse Power Dissipation |
|
| 峰值脉冲电流IPPm Peak Forward Surge Current |
1A |
| 额定耗散功率Pd Power dissipation |
|
| Description & Applications | Low Capacitance TVS Diode ;Features • ESD / transient protection of high-speed data lines in 3.3 / 5 / 12 V applications according to: IEC61000-4-2 (ESD): up to ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): up to 2.5 A (8/20 µs) • Smallest form factor down to 1.0 x 0.6 x 0.4 mm • Max. working voltage: -8 / +14 V or +8 / -14 V • Very low capacitance down to 2 pF • Very low reverse current < 1 nA typ. • Very low series inductance down to 0.4 nH • Pb-free (RoHS compliant) package • Qualified according AEC Q101 |
| 描述与应用 | 低电容TVS二极管;特性 •高速ESD/瞬态保护 3.3 / 5/12 V应用程序的数据线 根据： IEC61000-4-2（ESD）：±25 kV（接触） IEC61000-4-4（EFT）：40（5/50纳秒） IEC61000-4-5（浪涌）：高达2.5 A（8/20微秒） •最小的外形尺寸1.0×0.6×0.4毫米 •最大。工作电压：-8 /+14 V或+8/-14 V •非常低的电容为2 pF •非常低的反向电流<1 nA（典型值）。 •非常低的串联电感下降到0.4 nH的 •无铅封装（符合RoHS） •符合AEC Q101 |
