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Product description
电路数量
Number of Regulators
1
输入电压VIN
Voltage - Input
6V
输出电压VOUT
Voltage - Output
1.2V
输出电流Io
Current - Output
50mA
最大压降VDO
Voltage - Dropout
400mV/0.4V
带使能脚EN/CE(ON/OFF功能)
With Enable Pin
无 No
最大耗散功率Pd
Power dissipation
800mW/0.8W
Description & Applications200 mA CMOS Low-Dropout Regulator •Low quiescent bias current ( IB = 50 μA (typ.) at IOUT = 0 mA ) • Low stand-by current ( IB(OFF) = 0.1 μA (typ.) at Stand-by mode ) • Low dropout voltage ( VIN - VOUT = 90 mV (typ.) at TCR4S25DWBG, IOUT = 50 mA ) • High ripple rejection ratio ( R.R = 80 dB (typ) at IOUT = 10 mA, f =1kHz ) • Low output noise voltage (VNO = 30 μVrms (typ.) at TCR4S25DWBG, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz) • Auto-discharge • Control pull-down resistor • Overcurrent protection • Ceramic capacitors can be used ( CIN = 0.1 μF, COUT =1.0 μF ) • Very small package, WCSP ( 0.79 mm x 0.79 mm x 0.50 mm )
描述与应用200毫安的CMOS低压差稳压器 •低静态偏置电流(IB= 50μA(典型值)IOUT= 0毫安) •低待机电流(IB(关)  = 0.1μA(典型值)在待机模式) •低压差电压(VIN - VOUT=90 mV的(典型值)在TCR4S25DWBG,IOUT= 50 mA时) •高纹波抑制比(RR= 80分贝(典型值)IOUT= 10 mA时,F =1kHz时) •低输出噪声电压(VNO=30μVrms的(典型值)的TCR4S25DWBG,IOUT = 10毫安,10赫兹≤F≤100千赫) •自动放电 •控制下拉电阻 •过流保护 •可以使用陶瓷电容(CIN= 0.1μF,COUT=1.0μF) •非常小的封装,采用WCSP封装(0.79毫米×0.79毫米×0.50毫米)
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