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IPD13N03LAG N MOSFET 25V 30A TO252 MARKING 13N03LA Ideal for high-frequency dc/dc converters
| Drain-Source Voltage （Vds） | 25V |
|
Vgs(±) Gate-Source Voltage |
|
| Drain Current （Id） | 30A |
| Drain-Source On-State （Rds） | V GS=10 V, I D=30 A
RDS=10.7~12.8mΩ
|
|
Vgs （th） Gate-Source Threshold Voltage |
1.2~2v |
| Power dissipation （Pd） | 46w |
| Description & Applications | OptiMOS®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x RDS(on) product (FOM)
• Superior thermal resistance
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