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S4X8BSRP
| 反向重复峰值电压VRRM/断态重复峰值电压VDRM Repetitive peak reverse voltage/Repetitive peak off-state voltage |
400V-800V |
| 通态平均电流IT(AV) Average on-state current |
0.51A |
| 通态最大电流IT(RMS) RMS on-state current |
0.8A |
| 栅极触发电压VGT Gate trigger voltage |
0.8V |
| 栅极触发电流IGT Gate trigger current |
5μA-200μA |
| 保持电流IH Holding current |
5mA |
| 峰值通态电压VTM On-state voltage |
1.7V |
| 重复峰值断态电流IDRM Repetitive peak off-state current |
3μA |
| 浪涌电流ITSM(50Hz、60Hz) Current - Non Rep. Surge 50, 60Hz (Itsm) |
8A |
| Description & Applications | RoHS compliant and Halogen-Free Thru-hole and surface mount packages Surge current capability > 10Amps Blocking voltage ( VDRM / VRRM ) capability - up to 800V High dv/dt noise immunity Improved turn-off time (tq) < 25 μsec Sensitive gate for direct microprocessor interface |
| 描述与应用 | 符合RoHS标准，不含卤素 通孔和表面贴装封装 浪涌电流能力>10安培 阻断电压（VDRM/ VRRM)能力高达800伏特 高噪声免疫力 改进的关断时间（TQ）<25微秒 敏感栅直接微处理器接口 |
