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TPCP8F01 PNP+N Channel MOS MARKING 8F01
| Transistor Type | PNP |
Collector-Base Voltage(VCBO) |
-30V |
Collector-Emitter Voltage(VCEO) |
-20V |
Collector Current(IC) |
-3.0A |
Transtion Frequency(fT) |
|
DC Current Gain(hFE) |
200~500 |
| VCE（sat） Collector-Emitter Saturation Voltage |
-0.19V |
| MOSFET TYPF | N-ch MOS FET |
| Vds Drain-Source Voltage |
20V |
| Vgs(±) Gate-Source Voltage |
±10V |
Drain Current(ID) |
100MA/0.1A |
| Rds(on) FET Drain-Source On-State Resistance |
ID = 10 mA, VGS = 4.0 V RDS=1.5~3Ω
ID = 10 mA, VGS = 2.5 V RDS=2.2~4Ω
ID = 1 mA, VGS = 1.5 V RDS=5.2~15Ω
|
| Vgs（th） Gate-Source Threshold Voltage |
0.6~1.1V |
Power Dissipation(PD_ |
1W |
Description & Applications |
Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
○ Swtching Applications
○ Load Switch Applications
○ Multi-chip discrete device; built-in PNP Transistor for
main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
(PNP Transistor)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
(PNP Transistor)
|
