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TJ15P04M3 P MOSFET -40V -15A TO252 MARKING TJ15P04M3
| Drain-Source Voltage （Vds） | -40V |
|
Vgs (±) Gate-Source Voltage |
±20V
|
| Drain Current （Id） | -15A |
| Drain-Source On-State （Rds） | RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
|
| Gate-Source Threshold Voltage （th） | -0.8~-2.0V |
| Power dissipation （Pd） | 29W |
| Description & Applications | MOSFETs Silicon P-Channel MOS (U-MOS)
• DC-DC Converters
• Desktop Computers
(1) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
(2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
(3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
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