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MMBF170 N MOSFET 60V 500MA SOT23 MARKING 6Z Voltage controlled small signal switch

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Product description
Drain-Source Voltage (Vds)  60V

Vgs(±)

Gate-Source Voltage

 20V
Drain Current (Id)  500MA
Drain-Source On-State (Rds)  VGS = 10V, ID = 200mA RDS=1.5~5Ω

Vgs (th)

Gate-Source Threshold Voltage

 0.8~3v
Power dissipation (Pd)  300mw
Description & Applications  N-Channel Enhancement Mode Field Effect Transistor
■ High density cell design for low RDS(ON).
■ Voltage controlled small signal switch.
■ Rugged and reliable.
■ High saturation current capability.
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