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RN1104MFV Bias Resisto NPN 50V 0.1A R1=R2=47KΩ SOT723 MARKING XD

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100mA/0.1A
基极输入电阻R1 Input Resistance(R1) 47KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 80
截止频率fT Transtion Frequency(fT)  
耗散功率Pc Power Dissipation 0.15W/150mW
Description & Applications Features Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2104MFV
描述与应用 特性 开关,逆变电路,接口电路和驱动器电路应用 适合非常高密度安装超小型封装, 结合到晶体管偏置电阻器减少部件的数量,所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可用于在各种电路。 对管是RN2104MFV
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