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2SK3669 N-CHANNEL MOS FET 100V 10A TO252 代码 K3669 Switching Regulators, for Audio Amplifier and Motor Drive
| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 10A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.095Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 3~5V |
| 耗散功率Pd Power Dissipation | 20W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive Applications Features Switching Regulators, for Audio Amplifier and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.) High forward transfer admittance: |Yfs| = 6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Enhancement-mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型（π-MOS七的） 开关稳压器，音频放大器和电机驱动应用 特性 开关稳压器，音频放大器和电机 驱动应用 低漏源导通电阻RDS（ON）= 95mΩ（典型值） 高正向转移导纳：| YFS|=6 S（典型值） 低漏电流：IDSS= 100μA（最大值）（VDS= 100 V） 增强模式：VTH =3.0到5.0 V（VDS=10 V，ID= 1mA） |
