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DMN55DOUT-7 N-channel MOS 50V 160MA SOT523 MARKING NAC

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Product description
Vds Drain-Source Voltage 50V
Vgs(±) Gate-Source Voltage 12V
Id Drain Current 160MA
Rds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
VGS = 4V, ID = 100mA RDS=3.1~4Ω
VGS = 2.5V, ID = 80mA RDS=4~5Ω
Vgs(th) Gate-Source Threshold Voltage 0.7~1v
Pd Power Dissipation 0.2w
Description & Applications
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 
 
Low On-Resistance 
• Very Low Gate Threshold Voltage 
• Low Input Capacitance 
• ESD Protected Gate to 2kV 
 
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