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DMN55DOUT-7 N-channel MOS 50V 160MA SOT523 MARKING NAC
Vds Drain-Source Voltage | 50V |
Vgs(±) Gate-Source Voltage | 12V |
Id Drain Current | 160MA |
Rds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
VGS = 4V, ID = 100mA RDS=3.1~4Ω
VGS = 2.5V, ID = 80mA RDS=4~5Ω
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Vgs(th) Gate-Source Threshold Voltage | 0.7~1v |
Pd Power Dissipation | 0.2w |
Description & Applications |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate to 2kV
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