Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
NTD40N03RT4G MOSFET-N 25V 45A TO252 MARKING T40N03G Low Gate Charge
| 最大源漏极电压Vds Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS Drain Current |
45A |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage |
1~2v |
| 耗散功率Pd Power Dissipation |
1.5W |
| Description & Applications | •Power MOSFET •Low RDS(on) to Minimize Conduction Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters |
| 描述与应用 | •功率MOSFET •低的RDS（on）减少传导损耗 •低栅极电荷 •优化高效率的DC-DC转换器的高侧开关需求 |
