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HB2301W P MOSFET 20V 1.8A SOT323 代码 JJ1 1.8V drive Low on-resistance
| Drain-Source Voltage （Vds） | 20V |
|
Vgs (±) Gate-Source Voltage |
8V |
| Drain Current （Id） | 1.8A |
| Drain-Source On-State （Rds） | Ron = 363mΩ (max) (@VGS = −1.8 V)
Ron = 230mΩ (max) (@VGS = −2.5 V)
Ron = 158mΩ (max) (@VGS = −4.0 V)
|
| Gate-Source Threshold Voltage （th） | |
| Power dissipation （Pd） | 500MW/0.5W |
| Description & Applications | Field Effect Transistor Silicon P-Channel MOS Type
High Speed Switching Applications
• 1.8V drive
• Low on-resistance:
|
