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PH3230S N-channel enhancement mode 30V 100A SOT669 MARKING 3230s
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| Vgs(±) Gate-Source Voltage | 20V |
| Id Drain Current | 100A |
| Rds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | VGS = 10 V; ID = 25 A RDS= 2.7~3.2 mΩ |
| Vgs（th） Gate-Source Threshold Voltage | 1~3V |
| Power Dissipation | 62.5W |
| Description & Applications |
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
Logic level compatible
■ Low gate charge
■ High density mounting
■ Very low on-state resistance.
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