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FDB7030BLS N-Channel PowerTrenchò SyncFET 30v 56A TO263AB MARKING FDB7030BL
| 最大源漏极电压Vds Drain-Source Voltage |
30V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage |
20V |
| 漏极电流(Vgs=0V)IDSS Drain Current |
56A |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage |
|
| 耗散功率Pd Power Dissipation |
65W |
| Description & Applications |
30V N-Channel PowerTrenchÒ SyncFET™
· Includes SyncFET Schottky body diode
· Low gate charge (15nC typical)
· High performance trench technology for extremely
low RDS(ON) and fast switching
· High power and current handling capability
|
| 描述与应用 |
30 v n沟道PowerTrenchO SyncFET?
包括SyncFET·肖特基二极管
·低闸极电荷(15典型数控)
极·高性能沟技术
低RDS(上)和快速切换
·高功率和电流处理能力
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