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2SD1615A NPN Transistors(BJT) 120V 1A 160MHz 135~270 150mV/0.15V SOT-89 marking GQ radio power amplifier switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
120V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
60V |
| 集电极连续输出电流IC Collector Current(IC) |
1A |
| 截止频率fT Transtion Frequency(fT) |
160MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
135~270 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
150mV/0.15V |
| 耗散功率Pc Power Dissipation |
2W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • high DC current Gain |
| 描述与应用 | NPN平面外延硅晶体管 POWER迷你模具 说明 2SD1615，1615A音频功放和开关应用而设计的，特别是 混合集成电路。 特点 •世界标准小型封装 •低VCE（sat）的VCE（饱和）=0.15 V •高直流电流增益 |
