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2SD1615A NPN Transistors(BJT) 120V 1A 160MHz 135~270 150mV/0.15V SOT-89 marking GQ radio power amplifier switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
120V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
60V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
160MHz
直流电流增益hFE
DC Current Gain(hFE)
135~270
管压降VCE(sat)
Collector-Emitter Saturation Voltage
150mV/0.15V
耗散功率Pc
Power Dissipation
2W
Description & Applications NPN Epitaxial Planar Silicon Transistor POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • high DC current Gain
描述与应用 NPN平面外延硅晶体管 POWER迷你模具 说明 2SD1615,1615A音频功放和开关应用而设计的,特别是 混合集成电路。 特点 •世界标准小型封装 •低VCE(sat)的VCE(饱和)=0.15 V •高直流电流增益
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