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CES2324 N-Channel Enhancement Mode Field Effect Transistor 20V 4.2A SOT23 MARKING 248R
| Drain-Source Voltage （Vds） | 20V |
|
Vgs(±) Gate-Source Voltage |
12V |
| Drain Current （Id） | 4.2A |
| Drain-Source On-State （Rds） | RDS(ON)= 45mΩ @VGS = 4.5V.
RDS(ON)= 80mΩ @VGS = 2.5V.
|
|
Vgs （th） Gate-Source Threshold Voltage |
0.5V~1.5V |
| Power dissipation （Pd） | 1.25W |
| Description & Applications | N-Channel Enhancement Mode Field Effect Transistor
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
|
