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HB6N0130FE MOSFET Dual N-ch 30V 100mA SOT-563F

Model：HB6N0130FE
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Manufacturer：
Date Code：12+ROHS
Package：SOT-563F
Standard Package：4000
Min Order：1

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Product description

Drain-Source Voltage	30V
Gate-Source Voltage	20V
Drain Current	100MA
Drain-Source On-State Resistance	Ron = 4.0 Ω (max) (@VGS = 4 V) Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Gate-Source Threshold Voltage	0.8~1.5V
Power Dissipation	0.15W
Description & Applications	High Speed Switching Applications Analog Switching Applications Low ON resistance
Technical Documentation Download	Read Online

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