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MA4E1339E1-1068T RF & Microwave Medium Barrier Silicon 20 V Schottky Diode 30MA VF=0.41V SOT143 MARKING 7G

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Product description
Reverse Voltage(Vr)  20V
Average Rectified Current(Io)  30MA
Forward Voltage(Vf)  410MV/0.41V
Junction capacitance(Cj)  1.2PF
Power Dissipation (Pd)  250MW
Description & Applications  Silicon Medium Barrier Schottky Diodes
• RF & Microwave Medium Barrier Silicon 20 V Schottky Diode 
• Available as Single Diode, Series Pair or Unconnected Pair Configurations. 
• Low Profile Surface Mount Plastic Packages
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