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MA4E1339E1-1068T RF & Microwave Medium Barrier Silicon 20 V Schottky Diode 30MA VF=0.41V SOT143 MARKING 7G
Reverse Voltage(Vr) | 20V |
Average Rectified Current(Io) | 30MA |
Forward Voltage(Vf) | 410MV/0.41V |
Junction capacitance(Cj) | 1.2PF |
Power Dissipation (Pd) | 250MW |
Description & Applications | Silicon Medium Barrier Schottky Diodes
• RF & Microwave Medium Barrier Silicon 20 V Schottky Diode
• Available as Single Diode, Series Pair or Unconnected Pair Configurations.
• Low Profile Surface Mount Plastic Packages
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