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CFB0301-000T High Dynamic Range Low-Noise GaAs FET SO86
| Drain-Source Voltage （Vds） | |
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V(BR) GS Gate-Source Voltage |
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(Vgs=0V)IDSS Drain Current |
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Vgs(off) Gate-Source Cut-off Voltage |
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| Power dissipation （Pd） | |
| Description & Applications | High Dynamic Range Low-Noise GaAs FET
Features
❏ Low-Noise Figure from 0.8 to 2.0 GHz
❏ High Gain
❏ High Intercept Point
❏ Highly Stable
❏ Easily Matched to 50Ω
❏ 70 mil Package
Applications
❏ Cellular Base Stations
❏ PCS Base Stations
❏ Industrial Data Networks
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