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BCP5110TA PNP transistors（BJT）-45V 1A 150MHZ 63~160 -0.5V SOT-223 marking BCP5110
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -45V | ||||||||
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -45V | ||||||||
| 集电极连续输出电流ICCollector Current(IC) | -1A | ||||||||
| 截止频率fTTranstion Frequency(fT) | 150MHZ | ||||||||
| 直流电流增益hFEDC Current Gain(hFE) | 63~160 | ||||||||
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -0.5V | ||||||||
| 耗散功率PcPoWer Dissipation | 2W | ||||||||
| Description & Applications | IC = -1A Continuous Collector Current | • Low Saturation Voltage VCE(sat) < -500mV @ -0.5A | • Gain groups 10 and 16 | • Epitaxial Planar Die Construction | • Complementary NPN types: BCP54, 55 and 56 | • Lead-Free, RoHS Compliant (Note 1) | • Halogen and Antimony Free. “Green” Devices (Note 2) | • Qualified to AEC-Q101 Standards for High Reliability | |
| 描述与应用 |
