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BCX5610TA NPNTransistors(BJT) 100V 1A 150MHZ 63~160 0.5V SOT-89 MARKING BK
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 100v |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 80v |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 150MHZ |
| 直流电流增益hFEDC Current Gain(hFE) | 63~160 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | 0.5V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | • Ic = 1A Continuous Collector Current • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A • Gain groups 10 and 16 • Epitaxial Planar Die Construction • Complementary PNP types: BCX51, 52 and 53 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free. “Green” Devices (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • Medium Power Switching or Amplification Applications • AF driver and output stages |
| 描述与应用 | •IC=1A的连续集电极电流 •低饱和电压VCE（sat）的<500mV的@0.5A •增益组10和16 •外延平面小片建设 •互补PNP类型：BCX51，52和53 •无铅，符合RoHS（注1） •无卤素和无锑。 “绿色”设备（注2） •符合AEC-Q101标准的高可靠性 •中等电源开关或放大应用 •AF驱动器和输出级 |
