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HB6P0130FE MOSFET Dual P-ch 30V 100mA SOT-563F
| Drain-Source Voltage | -30V |
| Gate-Source Voltage | 20V |
| Drain Current | -100mA/-0.1A |
| Drain-Source On-State Resistance | 12Ω@ VGS = -4V, ID = -10mA |
| Gate-Source Threshold Voltage | -1.1~-1.7V |
| Power Dissipation | 150mW/0.15W |
| Description & Applications | Field Effect Transistor Silicon P Channel MOS Type ●High Speed Switching Applications ●Analog Switch Applications ● Small package ● Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) |
