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SSM6N42FE Complex FET 20V 800mA/0.8A SOT-563/ES6 marking NN4 high-speed switch
| 最大源漏极电压VdsDrain-Source Voltage | 20V | ||||
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V | ||||
| 最大漏极电流IdDrain Current | 800mA/0.8A | ||||
| 源漏极导通电阻RdsDrain-Source On-State Resistance | RDS(ON) = 600 mΩ (max) (@VGS = 1.5V) | RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) | RDS(ON) = 330 mΩ (max) (@VGS = 2.5V) | RDS(ON) = 240 mΩ (max) (@VGS = 4.5V) | |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.35~1V | ||||
| 耗散功率PdPower Dissipation | 150mW/0.15W | ||||
| Description & Applications | ○ Power Management Switch Applications | ○ High-Speed Switching Applications | |||
| 描述与应用 | ○开关电源管理应用程序 ○高速切换应用程序 |
