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Parameters:

  • Model:2SB1132 T100Q
  • Manufacturer:HUABAN
  • Date Code:05+ 05+ROHS
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:BAQ
  • Package:SOT-89/SC-62/MPT

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
120~270
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & Applications Medium Power Transistor Features 1) Low VCE(sat). 2)Complementary 2SD1664
描述与应用 中等功率晶体管 特点 1)低VCE(sat)的。 2)互补型2SD1664

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SB1132 T100Q
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