集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 10V |
集电极连续输出电流IC
Collector Current(IC) | 40mA |
截止频率fT
Transtion Frequency(fT) | 10Ghz |
直流电流增益hFE
DC Current Gain(hFE) | 50~250 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | 100mW/0.1W |
| Description & Applications | Features •Silicon NPN epitaxial planar type •Low noise figure High gain •NF=1.1db |S21e|*2=15.5db Amplication •VHL ~ UHF band low noise amplifier application |
| 描述与应用 | 特点 •NPN硅外延平面型 •低噪声系数高增益 •NF=1.1分贝| S21E| *2的=15.5分贝扩增 •VHL〜UHF频段低噪声放大器的应用 |