集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC
Collector Current(IC) | 400mA/0.4A |
截止频率fT
Transtion Frequency(fT) | 130MHz |
直流电流增益hFE
DC Current Gain(hFE) | 300~600 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 15mV |
耗散功率Pc
Power Dissipation | 150mW/0.15W |
| Description & Applications | transistor SILICON NPN EPITAXIAL TYPE Audio Frequency General Purpose Amplifier Applications Muting and Switching Applications • Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max) |
| 描述与应用 | 晶体管NPN硅外延型 音频通用放大器应用 静音和开关应用 •低集电极饱和电压VCE（SAT）（1） =15毫伏 @ IC=10毫安/ IB= 0.5毫安 •高集电极电流IC= 400 mA（最大） |