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Parameters:

  • Model:2SD1767 T100R
  • Manufacturer:HUABAN
  • Date Code:04+rohd 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:DCR
  • Package:SOT-89/SC-62/MPT3

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
700mA/0.7A
截止频率fT
Transtion Frequency(fT)
120MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & Applications Features Medium Power Transistor (-80V, -0.7A) *high breakdown voltage
描述与应用 特点 中等功率晶体管(-80V,-0.7A) 高击穿电压

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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2SD1767 T100R
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